庄闲和游戏官网

CN EN
Home
About Us
Newpros
650V Super Junction N-Channel MOSFET
650V Super Junction N-Channel MOSFET Back
 PDF

Introduction 1. The 650V series superjunction products designed by the special multi-layer epitepity process of Yangjie Technology can meet the application requirements of low conduction loss, low switching loss, EMI compatibility and different circuit topologies. The products have good performance of internal conduction resistance (Rdson) and gate charge (Qg), reduce conduction loss and switching loss. Lower switching noise and lower Trr improve system stability and performance.
2. Switch speed and EMI balance, lower Trr characteristics, suitable for charger, power adapter, TV power supply, industrial power supply and other fields, can also meet some half-bridge or various bridge circuit topology application requirements.
Features 1. Adopt the special multi-layer epitaxial process design of Yangjie Technology, with higher process stability and reliability, switching speed and EMI balance, lower Trr characteristics;
2. The series of products have the characteristics of low on-resistance, low gate charge, low on-loss and low switching loss;
3. To-252 /ITO-220AB package, with better calorific value characteristics.
SPECIFICATION
Related new products

SMB-W Package EM540BG

TOLL N100V MOSFETs for Industrial

IGBT Micro Trench Discrete for PV/Eenergy Storage/EV Charger Application

Optimization Design of Rectifier Bridge —— New Package GBU-L

1200V 40mΩ SiC MOSFET

TO-247AC Package FRED for Charging Piles and Household Appliances, etc

Econo 3 Series IGBT Modules for Variable Frequency Servo

Constant VC ESD Product

50uA SOD-523 Package Small Signal Zener Diode
网站地图